Design, selection and implementation of flash erase EEPROM memorycells

(1992) Design, selection and implementation of flash erase EEPROM memorycells. Circuits, Devices and Systems, IEE Proceedings G, 139.


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The author reports an investigation into the design and process constraints of flash EEPROM memory cells. He describes several possible structures which were developed by the MOS memory RD group of National Semiconductor Corporation at West Jordan, Utah. These structures were implemented and tested on a specially designed test chip. In addition to the typical structures of poly 1 floating gate and poly 2 control gate, new novel structures of poly 2 floating gate and poly 1 control gate were implemented. A total of five major structures are described. The author discusses the principle of operation, advantages and disadvantages of each of these structures. Also included are characteristic results and a discussion of the performance of these candidate cells

Item Type: Article
Subjects: Computer
Department: College of Chemicals and Materials > Chemical Engineering
Depositing User: Mr. Admin Admin
Date Deposited: 24 Jun 2008 13:37
Last Modified: 01 Nov 2019 14:06