(2003) Microwave Performance of Optically Controlled MESFETs. In: 10th IEEE International Conference on Electronics, Circuits and Systems, Sharjah.

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Abstract

This paper presents the characterization of illuminated high-frequency active devices using a time -domain physical simulation model. The model is based on Boltztnann’s Transport Equation (BTE), which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent camer density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. The calculated y-parameters of the device show the profound effect of illumination on the microwave characteristics. These findmgs make the model an important tool for the design of active devices under illumination control.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Electrical
Department:	College of Engineering and Physics > Electrical Engineering
Depositing User:	Mr. Md. Ahsanul Alam
Date Deposited:	06 Apr 2008 13:09
Last Modified:	01 Nov 2019 13:25
URI:	http://eprints.kfupm.edu.sa/id/eprint/961