"Harmonic and intermodulation performance of LDMOS transistors"

(2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.

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Abstract

An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.

Item Type: Article
Subjects: Electrical
Divisions: College Of Engineering Sciences > Electrical Engineering Dept
Depositing User: AYHAM ZAZA
Date Deposited: 02 Apr 2008 14:52
Last Modified: 01 Nov 2019 16:25
URI: http://eprints.kfupm.edu.sa/id/eprint/946