(2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.
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Abstract
An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.
| Item Type: | Article |
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| Subjects: | Electrical |
| Department: | College of Engineering and Physics > Electrical Engineering |
| Depositing User: | AYHAM ZAZA |
| Date Deposited: | 02 Apr 2008 11:52 |
| Last Modified: | 01 Nov 2019 13:25 |
| URI: | http://eprints.kfupm.edu.sa/id/eprint/946 |