Energy model for optically controlled MESFETs

(2000) Energy model for optically controlled MESFETs. Microwave and Optical Technology Letters (MOTL), 26 (1). pp. 48-52. ISSN 0895-2477

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An energy-based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional local-field mobility models based on drift-diffusion formulations. It is shown that the drift-diffusion models lose their applicability in submicrometer gate-length devices. The presented time-domain model has a great potential in the analysis of microwave devices under ac and pulsed illumination conditions.

Item Type: Article
Subjects: Electrical
Department: College of Engineering and Physics > Electrical Engineering
Depositing User: ANKAR (g200603940) (g200603940)
Date Deposited: 25 Mar 2008 08:51
Last Modified: 01 Nov 2019 13:24