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    X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

    X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films. THIN SOLID FILMS 515 (4) 2006.

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    Abstract

    Abstract X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of Vatoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d–O 2p and Zn 4d–O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band. © 2006 Elsevier B.V. All rights reserved. Keywords: ZnO; XANES; Vanadium doping; Thin films; DC-sputtering

    Item Type: Article
    Subjects: Physics
    Depositing User: AbdulRahman
    Date Deposited: 19 Mar 2008 08:40
    Last Modified: 01 Nov 2019 13:24
    URI: http://eprints.kfupm.edu.sa/id/eprint/523