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    Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

    (1998) Prediction of the Harmonic Distortion in Mosfet Gate Capacitors. Analog Integrated Circuits and Signal Processing, 16 (3). pp. 299-304.

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    Abstract

    A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.

    Item Type: Article
    Subjects: Electrical
    Department: College of Engineering and Physics > Electrical Engineering
    Depositing User: ANKAR (g200603940) (g200603940)
    Date Deposited: 27 May 2008 12:21
    Last Modified: 01 Nov 2019 13:26
    URI: http://eprints.kfupm.edu.sa/id/eprint/1420