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Effects of Electrode Spacing on the Response of Optically Controlled MESFETs

Alsunaidi, M. A. and Al-Absi, M. (2003) Effects of Electrode Spacing on the Response of Optically Controlled MESFETs. In: IEEE/LEOS international Conference on Numerical Simulation of semiconductor Optoelectronic Devices, Tokyo.

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Abstract

In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminated, the carrier energy and carrier distribution inside the device are substantially affected by the incident optical energy. To account for these effects an accurate model based on the energy formulation of the transport equation coupled with optical energy conversion equations is used [1-2]. This model is used to investigate the optimum design of optically controlled MESFET structures considering the trade -off between the degradation in electric characteristics and the improvement in photoelectric conversion efficiency. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation.



Item Type:Conference or Workshop Item (Paper)
Date:October 2003
Date Type:Publication
Subjects:Electrical
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Alsunaidi, M. A. and Al-Absi, M.
ID Code:959
Deposited By:Mr. Md. Ahsanul Alam
Deposited On:06 Apr 2008 16:20
Last Modified:12 Apr 2011 13:06

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