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"Harmonic and intermodulation performance of LDMOS transistors"

Abuelma’atti, M.T. (2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.

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Abstract

An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.



Item Type:Article
Date:2003
Subjects:Electrical
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Abuelma’atti, M.T.
Email:mtaher@kfupm.edu.sa
ID Code:946
Deposited By:AYHAM ZAZA
Deposited On:02 Apr 2008 14:52
Last Modified:12 Apr 2011 13:06

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