Abuelma’atti, M.T. (2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.
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Abstract
An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.
| Item Type: | Article |
|---|---|
| Date: | 2003 |
| Subjects: | Electrical |
| Divisions: | College Of Engineering Sciences > Electrical Engineering Dept |
| Creators: | Abuelma’atti, M.T. |
| Email: | mtaher@kfupm.edu.sa |
| ID Code: | 946 |
| Deposited By: | AYHAM ZAZA |
| Deposited On: | 02 Apr 2008 14:52 |
| Last Modified: | 12 Apr 2011 13:06 |
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