Abuelma’atti, M.T. (2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.
An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.
|Divisions:||College Of Engineering Sciences > Electrical Engineering Dept|
|Deposited By:||AYHAM ZAZA|
|Deposited On:||02 Apr 2008 14:52|
|Last Modified:||12 Apr 2011 13:06|
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