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Energy model for optically controlled MESFETs

Al-Sunaidi, M. A. (2000) Energy model for optically controlled MESFETs. Microwave and Optical Technology Letters (MOTL), 26 (1). pp. 48-52. ISSN 0895-2477

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Abstract

An energy-based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional local-field mobility models based on drift-diffusion formulations. It is shown that the drift-diffusion models lose their applicability in submicrometer gate-length devices. The presented time-domain model has a great potential in the analysis of microwave devices under ac and pulsed illumination conditions.



Item Type:Article
Date:15 May 2000
Date Type:Publication
Subjects:Electrical
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Al-Sunaidi, M. A.
Email:msunaidi@kfupm.edu.sa
ID Code:625
Deposited By:ANKAR (g200603940) (g200603940)
Deposited On:25 Mar 2008 11:51
Last Modified:12 Apr 2011 13:06

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