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X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films

Faiz, M. and Tabet, N. and Mekki, A. and Mun, B.S. and Hussain, Z. X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films. THIN SOLID FILMS 515 (4) 2006.

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Abstract

Abstract X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of Vatoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d–O 2p and Zn 4d–O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band. © 2006 Elsevier B.V. All rights reserved. Keywords: ZnO; XANES; Vanadium doping; Thin films; DC-sputtering



Item Type:Article
Subjects:Physics
Creators:Faiz, M. and Tabet, N. and Mekki, A. and Mun, B.S. and Hussain, Z.
ID Code:523
Deposited By:AbdulRahman
Deposited On:19 Mar 2008 11:40
Last Modified:12 Apr 2011 13:07

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