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Bias field/frequency characteristic of millimeter wavesemiconductor resonators at 77K

Sheikh, S.I. (2000) Bias field/frequency characteristic of millimeter wavesemiconductor resonators at 77K. Microwave and Millimeter Wave Technology, 2000, 2nd International conference. ICMMT 2000, 1.

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Abstract

Axially magnetized planar gyroelectric resonators are characterized for both InSb and GaAs semiconductors at 77K. The calculations assume that these materials are represented by the tensor permittivity derived from the Drude model of cyclotron motion in a plasma. Modal information is presented in terms of bias field and signal frequency. Resonance and loss regions are identified. The dependency of the modal characteristics on changing material and geometrical properties of the resonator are illustrated. In order to measure the millimeter-wave properties of the magnetized semiconductor disk, a two port network is analyzed using the Green's function approach. This method is vital in calibrating the semiconductor material before designing magnetized semiconductor junction circulators for high-Tc superconductive circuits



Item Type:Article
Date:2000
Date Type:Publication
Subjects:Computer
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Sheikh, S.I.
ID Code:14802
Deposited By:KFUPM ePrints Admin
Deposited On:24 Jun 2008 16:50
Last Modified:12 Apr 2011 13:16

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