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Effects of electrode spacing on the response of optically controlled MESFETs

Alsunaidi, M.A. and Al-Absi, M.A. (2003) Effects of electrode spacing on the response of optically controlled MESFETs. Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International conference, 1.

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Abstract

An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.



Item Type:Article
Date:October 2003
Date Type:Publication
Subjects:Computer
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Alsunaidi, M.A. and Al-Absi, M.A.
ID Code:14562
Deposited By:KFUPM ePrints Admin
Deposited On:24 Jun 2008 16:40
Last Modified:12 Apr 2011 13:16

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