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Prediction of the Harmonic Distortion in Mosfet Gate Capacitors

Abuelma’atti, M.T. (1998) Prediction of the Harmonic Distortion in Mosfet Gate Capacitors. Analog Integrated Circuits and Signal Processing, 16 (3). pp. 299-304.

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Abstract

A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.



Item Type:Article
Date:August 1998
Date Type:Publication
Subjects:Electrical
Divisions:College Of Engineering Sciences > Electrical Engineering Dept
Creators:Abuelma’atti, M.T.
Email:mtaher@kfupm.edu.sa
ID Code:1420
Deposited By:ANKAR (g200603940) (g200603940)
Deposited On:27 May 2008 15:21
Last Modified:12 Apr 2011 13:08

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