Abuelma’atti, M.T. (1998) Prediction of the Harmonic Distortion in Mosfet Gate Capacitors. Analog Integrated Circuits and Signal Processing, 16 (3). pp. 299-304.
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Abstract
A Fourier-series model is presented for the capacitance-voltage characteristic of a MOS gate capacitor using transistors biased in the strong inversion or the accumulation region. Using this model closed-form expressions are obtained for predicting the harmonic distortion of the MOS gate capacitor driven by a large-amplitude sinusoidal current. Results are compared with reported experimental observations.
| Item Type: | Article |
|---|---|
| Date: | August 1998 |
| Date Type: | Publication |
| Subjects: | Electrical |
| Divisions: | College Of Engineering Sciences > Electrical Engineering Dept |
| Creators: | Abuelma’atti, M.T. |
| Email: | mtaher@kfupm.edu.sa |
| ID Code: | 1420 |
| Deposited By: | ANKAR (g200603940) (g200603940) |
| Deposited On: | 27 May 2008 15:21 |
| Last Modified: | 12 Apr 2011 13:08 |
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