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A novel flash erase EEPROM memory cell with reversed poly roles

Amin, A.A.M. (1991) A novel flash erase EEPROM memory cell with reversed poly roles. Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean, 1.

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A novel structure for a flash EEPROM memory cell is described. The structure employs the first poly as a control gate, while the second poly is used as the floating gate. Such a reversed structure allows the floating gate to overlap both the source and drain even with a merged transistor memory cell structure. Erasing can thus be performed independently at the source junction while programming is performed at the drain junction. This allows the independent optimization of each of the two junctions to satisfy the conflicting program and erase requirements. In addition, an alternative cell structure with a third poly erase electrode is made possible by the reversed poly roles

Item Type:Article
Date:May 1991
Date Type:Publication
Divisions:College Of Engineering Sciences > Chemical Engineering Dept
Creators:Amin, A.A.M.
ID Code:14117
Deposited By:KFUPM ePrints Admin
Deposited On:24 Jun 2008 16:23
Last Modified:12 Apr 2011 13:15

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