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Design, Selection and Implementation of Flash Erase EEPROM Memory Cell Structures

Amin, Alaaeldin (1992) Design, Selection and Implementation of Flash Erase EEPROM Memory Cell Structures. IEE Proceedings G on Circuits, Devices and Systems, 139 (3). pp. 370-376.

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Abstract

The author reports an investigation into the design and process constraints of flash EEPROM memory cells. He describes several possible structures which were developed by the MOS memory R&D group of National Semiconductor Corporation at West Jordan, Utah. These structures were implemented and tested on a specially designed test chip. In addition to the typical structures of poly 1 floating gate and poly 2 control gate, new novel structures of poly 2 floating gate and poly 1 control gate were implemented. A total of five major structures are described. The author discusses the principle of operation, advantages and disadvantages of each of these structures. Also included are characteristic results and a discussion of the performance of these candidate cells



Item Type:Article
Date:June 1992
Date Type:Publication
Subjects:Computer
Divisions:College Of Computer Sciences and Engineering > Computer Engineering Dept
Creators:Amin, Alaaeldin
Email:amindin@kfupm.edu.sa
ID Code:1234
Deposited By:Obaid-Ur-Rehman Khattak
Deposited On:28 Apr 2008 15:33
Last Modified:12 Apr 2011 13:09

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